ELIMINATION OF GAAS OVAL DEFECTS AND HIGH-THROUGHPUT FABRICATION OF SELECTIVELY DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES BY MBE

被引：20

作者：

FRONIUS, H

FISCHER, A

PLOOG, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90386-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：169 / 174

页数：6

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[1] ELIMINATION OF PAIR DEFECTS FROM GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
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[2] INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES
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[3] GAAS SUBSTRATE PREPARATION FOR OVAL-DEFECT ELIMINATION DURING MBE GROWTH
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PLOOG, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L137 - L138
[4] EFFECTS OF SUBSTRATE PREPARATION CONDITIONS ON GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (11) : 701 - 703
[5] SUBSTRATE CHEMICAL ETCHING PRIOR TO MOLECULAR-BEAM EPITAXY - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACES ETCHED BY THE H2SO4-H2O2-H2O SOLUTION
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 806 - 810
[6] HIGH-THROUGHPUT HIGH-YIELD FABRICATION OF SELECTIVELY DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
PLOOG, K
FISCHER, A
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (20) : 1392 - 1394
[7] GENERATION AND PROPAGATION OF DEFECTS INTO MOLECULAR-BEAM EPITAXIALLY GROWN GAAS FROM AN UNDERLYING GAAS SUBSTRATE
SHINOHARA, M
ITO, T
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3449 - 3455
[8] SURFACE-DEFECTS ON MBE-GROWN GAAS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 164 - 167
[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSPORT-PROPERTIES OF MODULATION-DOPED ALGAAS-GAAS HETEROSTRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 411 - 413
[10] PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY
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CHAI, YG
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 391 - 393