HIGH-GAIN GAAS AVALANCHE PHOTO-DIODES WITH PROTON-IMPLANTED GUARD RING

被引：5

作者：

SUSA, N

KANBE, H

NISHIOKA, T

OHMACHI, Y

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph ami Telephone Public Corporation, Musashino-shi, Tokyo, 180, 3-9-11, Midoricho

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 17期

关键词：

Avalanche photodiodes;

D O I：

10.1049/el:19790385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAs avalanche photodiode with a multiplication factor as high as 8 000 was prepared by Zn diffusion and proton double implantation. The proton-implanted guard ring completely prevented edge breakdown, and multiplication occurred uniformly over the junction area. Dark current was proved to be due to a leakage current at the periphery between junction and implanted layer. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：535 / 537

页数：3

共 7 条

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