EPITAXIALLY GROWN GUARD RINGS FOR GAAS DIODES

被引：3

作者：

WOLFE, CM

LINDLEY, WT

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 02期

关键词：

D O I：

10.1149/1.2411814

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：276 / &

共 11 条

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[2]

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[5]

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[9] LIGHT EMISSION FROM REVERSE BIASED GAAS + INP P-N JUNCTIONS [J].

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JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) :3543-&

[10] SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES [J].

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