X-RAY STUDY OF THE ANODIC-OXIDATION OF P+ POROUS SILICON

被引：23

作者：

BELLET, D

BILLAT, S

DOLINO, G

LIGEON, M

MEYER, C

MULLER, F

机构：

[1] Laboratoire de Spectrométrie Physique (URA 08 associée au CNRS), Université Joseph Fourier (Grenoble I), 38402 Saint-Martin d'Heres Cedex

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 86卷 / 01期

关键词：

D O I：

10.1016/0038-1098(93)90247-K

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of coherent and diffuse X-ray scattering measurements of electroluminescent p+ porous silicon of 60% porosity, obtained by an anodic oxidation are reported. Double-crystal diffraction experiments give information on the modification of the nanostructure as a function of the oxidation time (t(ox)) for a constant current density. The mismatch between the lattice parameters of the porous layer and of the substrate increases linearly for small values of t(ox) but it is nearly independent of t(ox) for t(ox) > 500 s. The change between these two regimes corresponds to the end of the electroluminescence.

引用

页码：51 / 54

页数：4

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