ELECTRONIC-STRUCTURE OF LIGHT-EMITTING POROUS SI

被引：198

作者：

VASQUEZ, RP

FATHAUER, RW

GEORGE, T

KSENDZOV, A

LIN, TL

机构：

[1] Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.106503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characterization of light-emitting porous Si films with x-ray photoelectron spectroscopy is reported. Only traces of O are detected on HF-etched samples, in contradiction to an earlier report that oxides are a significant component of porous Si. Si 2p and valence-band measurements demonstrate that the near-surface region of high porosity films which exhibit visible luminescence consists of amorphous Si.

引用

页码：1004 / 1006

页数：3

共 20 条

[1] STAIN FILMS ON SILICON [J].

ARCHER, RJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :104-110

[2] DETERMINATION OF LATTICE-PARAMETER AND ELASTIC PROPERTIES OF POROUS SILICON BY X-RAY-DIFFRACTION [J].

BARLA, K ;

HERINO, R ;

BOMCHIL, G ;

PFISTER, JC ;

FREUND, A .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :727-732

[3] THE FORMATION OF POROUS SILICON BY CHEMICAL STAIN ETCHES [J].

BEALE, MIJ ;

BENJAMIN, JD ;

UREN, MJ ;

CHEW, NG ;

CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) :408-414

[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[5] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].

CULLIS, AG ;

CANHAM, LT .

NATURE, 1991, 353 (6342) :335-338

[6] ANALYSIS OF POROUS SILICON [J].

EARWAKER, LG ;

FARR, JPG ;

GRZESZCZYK, PE ;

STURLAND, I ;

KEEN, JM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :317-320

[7] DETERMINATION OF THE FLUORINE DISTRIBUTION IN POROUS SILICON USING NUCLEAR-REACTION, XPS AND AUGER ANALYSES [J].

EARWAKER, LG ;

FARR, JPG ;

ALEXANDER, I ;

STURLAND, IM ;

KEEN, JM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :481-484

[8]

FATHAUER RW, IN PRESS APPL PHYS L

[9] HYDROGEN-TERMINATED SILICON SUBSTRATES FOR LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].

GRUNTHANER, PJ ;

GRUNTHANER, FJ ;

FATHAUER, RW ;

LIN, TL ;

HECHT, MH ;

BELL, LD ;

KAISER, WJ ;

SCHOWENGERDT, FD ;

MAZUR, JH .

THIN SOLID FILMS, 1989, 183 :197-212

[10] POROUS SILICON FILMS - PREPARATION AND EXAMINATION WITH SURFACE AND OPTICAL METHODS [J].

HARDEMAN, RW ;

BEALE, MIJ ;

GASSON, DB ;

KEEN, JM ;

PICKERING, C ;

ROBBINS, DJ .

SURFACE SCIENCE, 1985, 152 (APR) :1051-1062

← 1 2 →