ARSENIC-FREE GAAS SUBSTRATE PREPARATION AND DIRECT GROWTH OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL WITHOUT BUFFER LAYER

被引：16

作者：

IIZUKA, K ^{[1
]}

MATSUMARU, K ^{[1
]}

SUZUKI, T ^{[1
]}

HIROSE, H ^{[1
]}

SUZUKI, K ^{[1
]}

OKAMOTO, H ^{[1
]}

机构：

[1] CHIBA UNIV,FAC ENGN,INAGE KU,CHIBA 263,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00722-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-temperature treatment of GaAs substrate without As flux in a preparation chamber was investigated as a substrate surface cleaning method for molecular beam epitaxial (MBE) growth. Oxide gases such as CO and CO2 were almost completely desorbed at a temperature above which Ga and As started to evaporate from the substrate. During the cleaning at a temperature as high as 575 degrees C for 30 min, about 100 nm thick GaAs was evaporated from the substrate, but its surface maintained mirror-like smoothness and showed streak pattern with surface reconstruction pattern in the reflection high energy electron diffraction (RHEED) observation. Direct growth of GaAs/Al GaAs quantum well (QW) structures was tried on such surfaces without introducing any buffer layers. The QW structure showed photoluminescence with both intensity and full width at half maximum comparable with those for the QW grown on the substrate cleaned by the conventional method with introducing a GaAs buffer layer.

引用

页码：13 / 17

页数：5

共 6 条

[1] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J].