BARRIER HEIGHT ENHANCEMENT OF PT/N-INP SCHOTTKY DIODES BY P2S5/(NH4)2S SOLUTION TREATMENT OF THE INP SURFACE

被引：26

作者：

HUANG, TS

FANG, RS

机构：

[1] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 08期

关键词：

D O I：

10.1016/0038-1101(94)90152-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of (NH4)2S and P2S5/(NH4)S solution treatment on the electrical characteristics of Pt/n-InP Schottky diodes has been investigated. The barrier heights of the diodes fabricated on these sulfidation treated n-InP wafers can be enhanced and the reverse current reduced, especially in P2S5/(NH4)2S (0.02 g/ml) solution treatment. Auger electron spectroscopy analysis on the P2S5/(NH4)2S-treated wafers, indicated that surface in atoms are mainly bonded to S atoms while there is no P-S bonding. Furthermore, a thin layer of In2S3, which is believed to act as an important role for the barrier height enhancement of the diode, on the P2S5/(NH4)2S-treated wafer has been identified.

引用

页码：1461 / 1466

页数：6

共 22 条

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