HIGH-BARRIER HEIGHT METAL-INSULATOR-SEMICONDUCTOR DIODES ON N-INP

被引：56

作者：

LEE, YS

ANDERSON, WA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4051 / 4056

页数：6

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[1] AG/AL SCHOTTKY CONTACTS ON N-INP
DUNN, J
STRINGFELLOW, GB
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (02) : 181 - 186
[2] ELECTRICAL-PROPERTIES OF INP MIS DEVICES
EFTEKHARI, G
TUCK, B
DECOGAN, D
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (06) : 1099 - 1107
[3] ANODIC-OXIDATION OF INP USING A CITRIC ACID BASED SOLUTION
FRANZ, G
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 500 - 505
[4] HIGH-PRESSURE THERMAL-OXIDATION OF INP IN STEAM
GANN, RG
GEIB, KM
WILMSEN, CW
COSTELLO, J
HRYCHOWAIN, G
ZETO, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 506 - 509
[5] LARGE BARRIER TUNNEL METAL-INSULATOR - SEMICONDUCTOR STRUCTURES
HANSELAER, PL
VANMEIRHAEGHE, RL
LAFLERE, WH
CARDON, F
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (02) : 94 - 101
[6] REDUCTION OF THE CONCENTRATION OF SLOW INSULATOR STATES IN SIO2/INP METAL-INSULATOR SEMICONDUCTOR STRUCTURES
KULISCH, W
KASSING, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02): : 523 - 529
[7] A PROPOSED MECHANISM FOR RADIATIVE RECOMBINATION THROUGH SURFACE-STATES ON INP
LESTER, SD
KIM, TS
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 2950 - 2954
[8] SCHOTTKY AND FIELD-EFFECT TRANSISTOR FABRICATION ON INP AND GAINAS
LOUALICHE, S
LHARIDON, H
LECORRE, A
LECROSNIER, D
SALVI, M
FAVENNEC, PN
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 540 - 542
[9] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE EFFECTS OF ULTRAPURE WATER ON GAAS
MASSIES, J
CONTOUR, JP
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1150 - 1152
[10] YTTERBIUM METAL-INSULATOR SEMICONDUCTOR CONTACTS TO INDIUM-PHOSPHIDE
REINHARDT, KC
SINGH, A
ANDERSON, WA
[J]. SOLID-STATE ELECTRONICS, 1988, 31 (10) : 1537 - 1539