SECONDARY ION MASS-SPECTROMETRY STUDY OF LIGHTLY DOPED P-TYPE GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

CLEGG, JB ^{[1
]}

FOXON, CT ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] FTZ,DEUTSCH BUNDESPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.331193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4518 / 4520

页数：3

共 13 条

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