CONSTANT MOBILITY OF TFT WITH DENDRITIC CRYSTALLIZED SILICON IN WIDE TEMPERATURE-RANGE AND RING OSCILLATOR CHARACTERISTICS

被引：11

作者：

NOGUCHI, T

KANAISHI, Y

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期

关键词：

D O I：

10.1109/55.43134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：543 / 546

页数：4

共 10 条

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[7] ADVANCED SUPERTHIN POLYSILICON FILM OBTAINED BY SI+ IMPLANTATION AND SUBSEQUENT ANNEALING [J].

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[8] LOW-TEMPERATURE POLYSILICON SUPER-THIN-FILM TRANSISTOR (LSFT) [J].

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