CRYSTALLIZATION OF AMORPHOUS TI-SI ALLOY THIN-FILMS - MICROSTRUCTURE AND RESISTIVITY

[1] [Anonymous], 1961, XRAY METALLOGRAPHY

[2] INSULATING, METALLIC, OR SEMIMETALLIC ELECTRONIC NATURE OF XSI2 COMPOUNDS - APPLICATION TO WSI2 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 890 - 895

[3] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5240 - 5245

[4] RESIDUAL RESISTIVITY OF COPPER AND SILVER ALLOYS - DEPENDENCE ON PERIODIC TABLE [J]. PHYSICAL REVIEW, 1957, 108 (02): : 285 - 290

[5] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[6] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[7] TRANSPORT-PROPERTIES OF HEXAGONAL AND TETRAGONAL MOSI2 THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 749 - 752

[8] STACKING-FAULTS IN WSI2 - RESISTIVITY EFFECTS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 332 - 334

[9] Goldschmidt H. J., 1967, INTERSTITIAL ALLOYS, DOI [10.1007/978-1-4899-5880-8, DOI 10.1007/978-1-4899-5880-8]

[10] IOFFE-REGEL CRITERION AND RESISTIVITY OF METALS [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7404 - 7407

[1] [Anonymous], 1961, XRAY METALLOGRAPHY

[2] INSULATING, METALLIC, OR SEMIMETALLIC ELECTRONIC NATURE OF XSI2 COMPOUNDS - APPLICATION TO WSI2 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 890 - 895

[3] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5240 - 5245

[4] RESIDUAL RESISTIVITY OF COPPER AND SILVER ALLOYS - DEPENDENCE ON PERIODIC TABLE [J]. PHYSICAL REVIEW, 1957, 108 (02): : 285 - 290

[5] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[6] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[7] TRANSPORT-PROPERTIES OF HEXAGONAL AND TETRAGONAL MOSI2 THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 749 - 752

[8] STACKING-FAULTS IN WSI2 - RESISTIVITY EFFECTS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 332 - 334

[9] Goldschmidt H. J., 1967, INTERSTITIAL ALLOYS, DOI [10.1007/978-1-4899-5880-8, DOI 10.1007/978-1-4899-5880-8]

[10] IOFFE-REGEL CRITERION AND RESISTIVITY OF METALS [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7404 - 7407