STABILITY OF LPCVD POLYSILICON GATES ON THIN OXIDES

被引：5

作者：

MURARKA, SP

SINHA, AK

LEVINSTEIN, HJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 11期

关键词：

D O I：

10.1149/1.2129492

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2446 / 2450

页数：5

共 14 条

[1] THERMAL EFFECTS ON INTEGEGRITY OF ALUMINUM TO SILICON CONTACTS IN SILICON INTEGRATED CIRCUITS [J].

ANSTEAD, RJ ;

FLOYD, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :381-&

[2]

CROOK DL, 1978, IEDM TECH DIGEST, P44

[3]

Daey Ouwens C., 1975, APPL PHYS LETT, V26, P569, DOI [10.1063/1.87995, DOI 10.1063/1.87995]

[4] OXIDATION OF PHOSPHORUS-DOPED LOW-PRESSURE AND ATMOSPHERIC-PRESSURE CVD POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :838-844

[5] RESISTIVITY OF LPCVD POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :833-837

[6] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].

KAMINS, TI ;

MANDURAH, MM ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :927-932

[7] EVOLUTION AND CURRENT STATUS OF ALUMINUM METALLIZATION [J].

LEARN, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :894-906

[8]

LINDENBERGER WS, UNPUBLISHED

[9] OXIDATION OF SILICON WITHOUT FORMATION OF STACKING-FAULTS [J].

MURARKA, SP ;

LEVINSTEIN, HJ ;

MARCUS, RB ;

WAGNER, RS .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :4001-4003

[10]

NAG HM, 1977, J ELCHEM SO, V124, P573

← 1 2 →