STUDY OF GASB(001) SUBSTRATE CHEMICAL ETCHING FOR MOLECULAR-BEAM EPITAXY

被引：14

作者：

DASILVA, FWO

SILGA, M

RAISIN, C

LASSABATERE, L

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.584831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：75 / 78

页数：4

共 12 条

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[8] PREPARATION OF CARBON-FREE GAAS-SURFACES - AES AND RHEED ANALYSIS [J].

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[9] CHEMICAL AND LP-ETCHING OF GALLIUM ANTIMONIDE SUBSTRATES [J].

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[10]

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