LIQUID-PHASE EPITAXY OF INGAP ON GAAS (100) SUBSTRATES AT LOW GROWTH TEMPERATURES DOWN TO 630-DEGREES-C

被引：7

作者：

KATO, T

MATSUMOTO, T

OGURA, H

机构：

[1] Yamanashi University, Koju, 400

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 06期

关键词：

LnGap; Lpe; Miscibility gap; Phase diagram; Photoluminescence;

D O I：

10.1143/JJAP.29.L856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaP layers were grown on GaAs (100) substrates by liquid phase epitaxy. The growth temperature (TG) was varied from 738 to 630°C. Layer qualities such as the surface morphology and photoluminescence characteristics were investigated. They became inferior with decreasing growth temperature when TG was lower than 700°C. The growth period required to grow a smooth surface was found to be shortened for TG's below 650°C. © 1990 The Japan Society of Applied Physics.

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页码：L856 / L859

页数：4

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