APPLICATION OF E-BEAM RECRYSTALLIZATION TO 3-LAYER IMAGE-PROCESSOR FABRICATION

被引：4

作者：

HAZAMA, H

TAKAHASHI, M

KAMBAYASHI, S

KEMMOCHI, M

TSUCHIYA, K

IIDA, Y

YANO, K

INOUE, T

YOSHIMI, M

YOSHII, T

TANGO, H

机构：

[1] ULSI Research Center, Toshiba Corporation, Saiwaiku, Kawasaki 210, 1, Komukai Toshiba-cho

[2] ULSI Research Center, Toshiba Corporation, Kawasaki 210, 1, Komukai Toshiba-cho Saiwaiku

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 01期

关键词：

D O I：

10.1109/16.65735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

E-beam recrystallization has been applied for the first time to fabricate a three-layer image processor. The seed structure as well as the E-beam conditions were successfully optimized so that a large-area SOI as wide as 1 mm was recrystallized without void generation nor causing damage in the underlying devices. The actual SOI area in the device, 850 x 1100 μm, was recrystallized with one E-beam scan by aligning its position. The three-layer image processor was capable of visual image sensing with a feature outline extraction in a parallel processing manner. Normal operations of the fundamental functions have been confirmed, demonstrating the feasibility of E-beam recrystallization to three-dimensional (3D) IC application. © 1991 IEEE

引用

页码：47 / 54

页数：8

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[11] DIRECT OBSERVATION OF GROWTH FRONT MOVEMENT IN ELECTRON-BEAM RECRYSTALLIZATION OF SILICON LAYER ON INSULATOR [J].