COMPARISON OF NEUTRAL ELECTRON TRAP GENERATION BY HOT-CARRIER STRESS IN N-MOSFET WITH OXIDE AND OXYNITRIDE GATE DIELECTRICS

被引：8

作者：

JOSHI, AB

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, TX

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 07期

关键词：

D O I：

10.1109/55.192755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a comparative study of neutral electron trap generation due to hot-carrier stress in n-MOSFET's with pure oxide, NH3-nitrided oxide (RTN), and reoxidized nitrided oxide (RTN / RTO) as gate dielectrics. Results show that neutral electron trap generation is considerably suppressed by nitridation and reoxidation. The nature of neutral traps is described based on the kinetics of trap filling by electron injection into the gate dielectrics immediately after CHES. Improved endurance of the RTN and RTN / RTO oxides is explained based on physical models related to interfacial strain relaxation.

引用

页码：360 / 362

页数：3

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