EFFECT OF SYNCHROTRON X-RAY-RADIATION ON THE CHANNEL HOT-CARRIER RELIABILITY OF REOXIDIZED NITRIDED SILICON DIOXIDE

被引：15

作者：

DUNN, GJ

机构：

[1] U.S. Department of State, Washington, DC

[2] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 01期

关键词：

D O I：

10.1109/55.75680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Channel hot-carrier-induced degradation was studied in reoxidized nitrided oxide n-channel MOSFET's which were exposed to 1-2-keV X-rays from a synchrotron source. It was found that transconductance degradation under high gate bias stress (V(g) = 1.3V(d)) is enhanced by the X-ray exposure to a lesser degree in reoxidized nitrided oxide (RNO) devices than in conventional oxide devices. This indicates that radiation generates fewer electron traps in RNO than in conventional oxide.

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页码：8 / 9

页数：2

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