INVERSION LAYER MOBILITY OF MOSFETS WITH NITRIDED OXIDE GATE DIELECTRICS

被引：62

作者：

SCHMIDT, MA ^{[1
]}

TERRY, FL ^{[1
]}

MATHUR, BP ^{[1
]}

SENTURIA, SD ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

关键词：

D O I：

10.1109/16.7364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1627 / 1632

页数：6

共 26 条

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