REOXIDIZED NITRIDED OXIDE FOR RADIATION-HARDENED MOS DEVICES

被引：35

作者：

DUNN, GJ

WYATT, PW

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2161 / 2168

页数：8

共 15 条

[1] THE EFFECT OF GATE MATERIAL ON OXIDE DEGRADATION DUE TO CHARGE-INJECTION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].

AVNI, E ;

SONNENBLICK, Y ;

NISSANCOHEN, Y .

SOLID-STATE ELECTRONICS, 1988, 31 (02) :245-250

[2] GENERATION OF INTERFACE STATES IN NITRIDED OXIDE GATE DIELECTRICS BY IONIZING-RADIATION AND FOWLER-NORDHEIM STRESSING [J].

DUNN, GJ .

APPLIED PHYSICS LETTERS, 1988, 53 (17) :1650-1651

[3] HOLE TRAPPING IN REOXIDIZED NITRIDED SILICON DIOXIDE [J].

DUNN, GJ .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :4879-4883

[4]

DUNN GJ, 1989, 1989 HEART C PATR AF

[5] USING LABORATORY X-RAY AND CO-60 IRRADIATIONS TO PREDICT CMOS DEVICE RESPONSE IN STRATEGIC AND SPACE ENVIRONMENTS [J].

FLEETWOOD, DM ;

WINOKUR, PS ;

SCHWANK, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1497-1505

[6] IMPROVED TRANSCONDUCTANCE UNDER HIGH NORMAL FIELD IN MOSFETS WITH ULTRATHIN NITRIDED OXIDES [J].

HORI, T ;

IWASAKI, H .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) :195-197

[7] MOBILITY DEGRADATION OF NITRIDED OXIDE MISFETS [J].

KUSAKA, T ;

HIRAIWA, A ;

MUKAI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) :166-172

[8] THE CONSTITUTION OF NITRIDED OXIDES AND REOXIDIZED NITRIDED OXIDES ON SILICON [J].

NAIMAN, ML ;

KIRK, CT ;

EMERSON, BL ;

TAITEL, JB ;

SENTURIA, SD .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :779-792

[9] SPATIAL DEPENDENCE OF TRAPPED HOLES DETERMINED FROM TUNNELING ANALYSIS AND MEASURED ANNEALING [J].

OLDHAM, TR ;

LELIS, AJ ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1203-1209

[10] INVERSION LAYER MOBILITY OF MOSFETS WITH NITRIDED OXIDE GATE DIELECTRICS [J].

SCHMIDT, MA ;

TERRY, FL ;

MATHUR, BP ;

SENTURIA, SD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (10) :1627-1632

← 1 2 →