MOBILITY DEGRADATION OF NITRIDED OXIDE MISFETS

被引：19

作者：

KUSAKA, T

HIRAIWA, A

MUKAI, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 01期

关键词：

D O I：

10.1149/1.2095544

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：166 / 172

页数：7

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共 16 条

[1] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS
BARDEEN, J
SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80
[2] STUDY OF ELECTRICAL CHARACTERISTICS ON THERMALLY NITRIDED SIO2 (NITROXIDE) FILMS
CHEN, CT
TSENG, FC
CHANG, CY
LEE, MK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) : 875 - 877
[3] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS
CONWELL, E
WEISSKOPF, VF
[J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390
[4] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS
HABRAKEN, FHPM
KUIPER, AET
TAMMINGA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6996 - 7002
[5] TEMPERATURE-DEPENDENCE OF SCATTERING IN THE INVERSION LAYER
HARTSTEIN, A
FOWLER, AB
ALBERT, M
[J]. SURFACE SCIENCE, 1980, 98 (1-3) : 181 - 190
[6] NITRIDATION OF SILICON AND OXIDIZED-SILICON
HAYAFUJI, Y
KAJIWARA, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2102 - 2108
[7] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS
ITO, T
NOZAKI, T
ISHIKAWA, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) : 2053 - 2057
[8] EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS
ITO, T
NAKAMURA, T
ISHIKAWA, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 184 - 188
[9] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS
ITO, T
NAKAMURA, T
ISHIKAWA, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 498 - 502
[10] RETARDATION OF DESTRUCTIVE BREAKDOWN OF SIO2-FILMS ANNEALED IN AMMONIA GAS
ITO, T
ARAKAWA, H
NOZAKI, T
ISHIKAWA, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) : 2248 - 2251