HOLE TRAPPING IN REOXIDIZED NITRIDED SILICON DIOXIDE

[1] SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1191 - 1197

[2] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[3] DUNN G, 1989, UNPUB FEB HARD EL RA

[4] GENERATION OF INTERFACE STATES IN NITRIDED OXIDE GATE DIELECTRICS BY IONIZING-RADIATION AND FOWLER-NORDHEIM STRESSING [J]. APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1650 - 1651

[5] MOS HARDNESS CHARACTERIZATION AND ITS DEPENDENCE UPON SOME PROCESS AND MEASUREMENT VARIABLES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1569 - 1572

[6] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[7] DEPENDENCE OF THE WORK-FUNCTION DIFFERENCE BETWEEN THE POLYSILICON GATE AND SILICON SUBSTRATE ON THE DOPING LEVEL IN POLYSILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 617 - 621

[8] SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 133 - 135

[9] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[10] RADIATION EFFECTS ON OXYNITRIDE GATE DIELECTRICS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4141 - 4145

[1] SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1191 - 1197

[2] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[3] DUNN G, 1989, UNPUB FEB HARD EL RA

[4] GENERATION OF INTERFACE STATES IN NITRIDED OXIDE GATE DIELECTRICS BY IONIZING-RADIATION AND FOWLER-NORDHEIM STRESSING [J]. APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1650 - 1651

[5] MOS HARDNESS CHARACTERIZATION AND ITS DEPENDENCE UPON SOME PROCESS AND MEASUREMENT VARIABLES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1569 - 1572

[6] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[7] DEPENDENCE OF THE WORK-FUNCTION DIFFERENCE BETWEEN THE POLYSILICON GATE AND SILICON SUBSTRATE ON THE DOPING LEVEL IN POLYSILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 617 - 621

[8] SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 133 - 135

[9] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[10] RADIATION EFFECTS ON OXYNITRIDE GATE DIELECTRICS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4141 - 4145