MULTILEVEL CONSTRUCTION OF SEEDED-LATERALLY EPITAXIAL SILICON FILMS ON INSULATOR

被引：3

作者：

HAMASAKI, T

INOUE, T

YOSHIMI, M

YOSHII, T

TANGO, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.339171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：126 / 130

页数：5

共 11 条

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HAMASAKI, T ;

INOUE, T ;

HIGASHINAKAGAWA, I ;

YOSHII, T ;

TANGO, H .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2971-2976

[3] SILICON-ON-INSULATOR STRUCTURES FORMED BY A LINE-SOURCE ELECTRON-BEAM - EXPERIMENT AND THEORY [J].

KNAPP, JA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2584-2592

[4]

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[5]

OHKURA M, 1984, 16TH C SOL STAT DEV, P503

[6] NEW TECHNOLOGY FOR TAPERED WINDOWS IN INSULATING FILMS [J].

ONO, H ;

TANGO, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) :504-506

[7]

SAMUEL NR, 1981, J CRYST GROWTH, V54, P267

[8]

SHASHKOV YM, 1966, FIZ TVERD TELA+, V8, P447

[9] SEEDING LATERAL EPITAXY OF SILICON ON INSULATOR WITH IMPROVED SEED AND CAP STRUCTURE BY PSEUDOLINE SHAPED ELECTRON-BEAM ANNEALING [J].

SUGURO, K ;

INOUE, T ;

HAMASAKI, T ;

YOSHII, T ;

YOSHIMI, M ;

TAKAHASHI, M ;

TANIGUCHI, K ;

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TANGO, H .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :696-699

[10]

TAMURA M, 1980, JPN J APPL PHYS, V23, pL19

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