SEEDING LATERAL EPITAXY OF SILICON ON INSULATOR WITH IMPROVED SEED AND CAP STRUCTURE BY PSEUDOLINE SHAPED ELECTRON-BEAM ANNEALING

被引：5

作者：

SUGURO, K

INOUE, T

HAMASAKI, T

YOSHII, T

YOSHIMI, M

TAKAHASHI, M

TANIGUCHI, K

KASHIWAGI, M

TANGO, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.96062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：696 / 699

页数：4

共 18 条

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