OXYGEN IN ZONE-MELTING-RECRYSTALLIZED SILICON-ON-INSULATOR FILMS - ITS DISTRIBUTION AND POSSIBLE ROLE IN SUB-BOUNDARY FORMATION

被引：16

作者：

FAN, JCC ^{[1
]}

TSAUR, BY ^{[1
]}

CHEN, CK ^{[1
]}

DICK, JR ^{[1
]}

KAZMERSKI, LL ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 11期

关键词：

D O I：

10.1063/1.94653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1086 / 1088

页数：3

共 17 条

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[8] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

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[9] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J].

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[10]

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