MEASUREMENT OF BARRIER HEIGHT ON ETCHED PARA-TYPE CADMIUM TELLURIDE

被引：28

作者：

PONPON, JP

SARAPHY, M

BUTTUNG, E

SIFFERT, P

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 59卷 / 01期

关键词：

D O I：

10.1002/pssa.2210590132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：259 / 262

页数：4

共 14 条

[1] AKOBIROVA AT, 1975, SOV PHYS SEMICOND+, V8, P1103
[2] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &
[3] STUDIES OF CDTE SURFACES WITH SECONDARY ION MASS-SPECTROMETRY, RUTHERFORD BACKSCATTERING AND ELLIPSOMETRY
HAGEALI, M
STUCK, R
SAXENA, AN
SIFFERT, P
[J]. APPLIED PHYSICS, 1979, 19 (01): : 25 - 33
[4] HAGEALI M, COMMUNICATION
[5] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES
MEAD, CA
SPITZER, WG
[J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +
[6] TUNNELING IN CDTE SCHOTTKY BARRIERS
PARKER, GH
MEAD, CA
[J]. PHYSICAL REVIEW, 1969, 184 (03): : 780 - &
[7] SURFACE-LAYERS ON CADMIUM TELLURIDE
PATTERSON, MH
WILLIAMS, RH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (05) : L83 - L86
[8] BARRIER HEIGHTS ON CADMIUM TELLURIDE SCHOTTKY SOLAR-CELLS
PONPON, JP
SIFFERT, P
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 427 - 430
[9] Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[10] SURFACE PROPERTIES OF 2-6 COMPOUNDS
SWANK, RK
[J]. PHYSICAL REVIEW, 1967, 153 (03): : 844 - +