EFFECT OF HEAT-TREATMENT ON ELECTRON TRAPS IN N-TYPE GAAS

被引：3

作者：

SUBRAMANIAN, S ^{[1
]}

GUHA, S ^{[1
]}

ARORA, BM ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 10期

关键词：

D O I：

10.1016/0038-1101(77)90167-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：799 / 802

页数：4

共 9 条

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[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

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[3] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J].

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[4]

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[5] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

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[6] STUDY OF ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS [J].

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MITONNEAU, A .

APPLIED PHYSICS, 1975, 8 (01) :15-21

[7]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P30

[8] EFFECT OF HEAT TREATMENT ON GALLIUM ARSENIDE CRYSTALS .I. THERMAL CONVERSION IN EXCESS ARSENIC VAPOR [J].

TOYAMA, M .

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[9]

ZAININGER KH, 1966, RCA REV, V27, P341

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