LOW-TEMPERATURE GROWTH OF SILICON DIOXIDE FILMS - A STUDY OF CHEMICAL BONDING BY ELLIPSOMETRY AND INFRARED-SPECTROSCOPY

被引：376

作者：

LUCOVSKY, G ^{[1
]}

MANITINI, MJ ^{[1
]}

SRIVASTAVA, JK ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT CHEM,CHAPEL HILL,NC 27514

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 02期

关键词：

D O I：

10.1116/1.583944

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：530 / 537

页数：8

共 39 条

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