SURFACE-STRUCTURE DEPENDENCE OF GAAS MICROCRYSTALS SIZE GROWN BY AS-INCORPORATION INTO GA DROPLETS

被引：4

作者：

CHIKYOW, T

TAKAHASHI, S

KOGUCHI, N

机构：

[1] National Research Institute for Metals, Tsukuba Laboratories, Tsukuba-shi, Ibaraki, 305

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91129-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Microcrystals of GaAs were grown on a Se-stabilized ZnSe and on a Zn-stabilized ZnSe surface by As incorporation into Ga droplets. The size of the GaAs microcrystals on the Zn-stabilized surface was smaller than that of those on the Se-stabilized surface. The size difference is explained by the reduced diffusivity of Ga atoms on the Zn-stabilized ZnSe surface, where active (111) dangling bonds of Se atoms are exposed neighbored by top Zn atoms.

引用

页码：241 / 244

页数：4

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