RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS FOR CONTACT LAYERS OF MESFETS

In this paper we report a detailed study of Si implants in GaAs typically used in our MESFET fabrication line for the contact layers, activated using the 'Heat pulse' RTA technique, to further demonstrate the well-documented advantages of short duration isothermal annealing. In this work we show how much more controlled carrier depth profiles are obtained and generally the superiority of RTA when compared with long time furnace annealing. It is shown that if the implant is annealed at 900 degree C for 6. 5s, the optimum annealing condition for the channel region reported by us previously, the resistivity is only compromised by about 10%. In conclusion, a channel implant of 8 multiplied by 10**1**2Si cm** minus **2, at ion energy of 180 keV, and a source/drain implant of 5 multiplied by 10** 1**3Si cm** minus **2, at ion energy of 90 keV, can be simultaneously annealed at 900 degree C for 6. 5s.