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AS+-PREAMORPHIZATION METHOD FOR SHALLOW P+-N JUNCTION FORMATION

被引：7
作者：
KWON, SJ
KIM, HJ
LEE, JD
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期
关键词：
SHALLOW P+-N JUNCTION FORMATION; BORON CHANNELING; AS+ PREAMORPHIZATION; RAPID THERMAL ANNEALING; FIELD RETARDED DIFFUSION; COMPENSATION EFFECT;
D O I：
10.1143/JJAP.29.L2326
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of preamorphization by As+ implantation for the shallow p+-n junction formation have been investigated in this study. The retarded diffusion effect of boron atoms due to the electric field produced by arsenic profile was observed during annealing. The shallow p+-n junction with low leakage was obtained by optimizing the thickness of the preamorphized layer.
引用
收藏
页码：L2326 / L2328
页数：3
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