CURRENT-DENSITY DEPENDENCE FOR DARK-LINE DEFECT GROWTH VELOCITY IN STRAINED INGAAS/ALGAAS QUANTUM-WELL LASER-DIODES

被引：17

作者：

FUKAGAI, K ^{[1
]}

ISHIKAWA, S ^{[1
]}

ENDO, K ^{[1
]}

YUASA, T ^{[1
]}

机构：

[1] NEC CORP LTD,RES & ENVIRONM PROTECT RES LABS,MAYAMAE KU,KAWASAKI 216,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3A期

关键词：

STRAINED QUANTUM WELL; INGAAS/ALGAAS LASERS; DARK-LINE DEFECT; DEFECT GROWTH SUPPRESSION; RELIABILITY;

D O I：

10.1143/JJAP.30.L371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dark-line defects (DLDs) of threading dislocation origin in strained InGaAs/AlGaAs quantum well laser diodes were observed by the electron-beam induced current technique. Current density dependence for the DLD growth velocity was compared quantitatively with that for unstrained GaAs/AlGaAs quantum well laser diodes for the first time. The <110> DLD growth velocity in InGaAs QW laser diodes is estimated to be about 1/100 of that for the <100>DLD growth in the GaAs QW laser diodes, showing linear dependence on injected current densities.

引用

页码：L371 / L373

页数：3

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