SWITCHING AND MEMORY CHARACTERISTICS OF ZNTE THIN-FILMS

被引：9

作者：

OTA, T

TAKAHASHI, K

MORIIZUMI, T

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 06期

关键词：

D O I：

10.1016/0038-1101(72)90016-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：725 / +

页数：1

相关论文

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[8] MEMORY EFFECTS IN ZNTE-INAS HETEROJUNCTIONS
OTA, T
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (11) : 1652 - +
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[10] MEMORY EFFECT OF GAAS THIN-FILM DIODE
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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 3009 - +