AVALANCHE INJECTION IN CDS FILMS

被引:21
作者
CHOPRA, KL
机构
关键词
D O I
10.1109/PROC.1963.2503
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1242 / &
相关论文
共 10 条
[1]   CURRENT-CONTROLLED NEGATIVE RESISTANCE IN THIN NIOBIUM OXIDE FILMS [J].
CHOPRA, KL .
PROCEEDINGS OF THE IEEE, 1963, 51 (06) :941-&
[2]  
CHOPRA KL, 1963, APR EL SOC M PITTSB
[3]   A NEW NEGATIVE-RESISTANCE DEVICE [J].
GEPPERT, DV .
PROCEEDINGS OF THE IEEE, 1963, 51 (01) :223-&
[4]   AVALANCHE INJECTION IN SEMICONDUCTORS [J].
GUNN, JB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (08) :781-790
[5]   DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J].
HOLONYAK, N .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12) :2421-&
[6]   DOUBLE INJECTION IN INSULATORS [J].
LAMPERT, MA .
PHYSICAL REVIEW, 1962, 125 (01) :126-&
[7]   METAL CONTACT DOUBLE INJECTION IN GAAS [J].
MEAD, CA .
PROCEEDINGS OF THE IEEE, 1963, 51 (06) :954-&
[8]  
STAFEEV VI, 1959, SOV PHYS-SOL STATE, V1, P763
[9]   AVALANCHE BREAKDOWN-DOUBLE INJECTION INDUCED NEGATIVE RESISTANCE IN SEMICONDUCTORS [J].
STEELE, MC ;
ANDO, K ;
LAMPERT, MA .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (11) :1729-&
[10]   NEGATIVE RESISTANCE AND HYSTERESIS IN A GERMANIUM-SILICON HETEROJUNCTION [J].
WEI, LY ;
SHEWCHUN, J .
PROCEEDINGS OF THE IEEE, 1963, 51 (06) :946-&