WIDE-BAND GAP SIH AT LOW H-CONTENT PREPARED BY INTERRUPTED GROWN AND H-PLASMA TREATMENT

Alternating the deposition of thin layers of a-Si:H at 100-degrees-C and exposure to r.f. H-plasma periodically, an widening of optical band gap by 20% along with the reduction in hydrogen content by 80% was observed in stacked layers. Interrupted growth and H-plasma treatment has been established as an effective technique for the elimination of hydrogen from Si:H network, however, simultaneous widening of optical band gap appears to be an interesting feature related to Nano-crystallization and quantum size effect in hydrogenated binary alloy.