IN-SITU DEPOSITION OF PZT THIN-FILMS BY RF MAGNETRON SPUTTERING

被引：8

作者：

ANSARI, PH ^{[1
]}

SAFARI, A ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT CERAM ENGN,PISCATAWAY,NJ 08855

来源：

INTEGRATED FERROELECTRICS | 1995年 / 7卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1080/10584589508220231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of ferroelectric lead zirconate titanate (PZT) were deposited in-situ by rf magnetron sputtering on thermally oxidized Si/Ti/Pt, ITO coated glass, SrTiO3/YBCO, and MgO/YBCO substrates. PZT films grown on multilayer Si substrates showed tendency for electric short that was subsided when a lead titanate diffusion barrier was used. The glass/ITO/PZT films displayed a phase transformation from pyrochlore to perovskite at 600 degrees C. Epitaxial PZT thin films deposited on YBCO displayed all the '001' peaks from the c-axis oriented YBCO films as well as the '00m' peaks from the PZT films. The remnant polarization and coercive field of MgO/YBCO/PZT films were 20 mu C/cm(2) and 45 kV/cm, respectively, compared with 8 mu C/cm(2) and 50 kV/cm for the Si-based PZT films. All optimum films prepared showed a dissipation factor of under 5% at 1 kHz.

引用

页码：185 / 193

页数：9

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