TEMPERATURE-DEPENDENCE OF REACTIVE ION ETCHING OF GAAS WITH CCL2F2-O-2

被引：25

作者：

PEARTON, SJ ^{[1
]}

EMERSON, AB ^{[1
]}

CHAKRABARTI, UK ^{[1
]}

LANE, E ^{[1
]}

JONES, KS ^{[1
]}

SHORT, KT ^{[1
]}

WHITE, AE ^{[1
]}

FULLOWAN, TR ^{[1
]}

机构：

[1] UNIV FLORIDA,GAINESVILLE,FL 32611

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3839 / 3849

页数：11

共 33 条

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[4] THE TEMPERATURE-DEPENDENCE OF THE ETCH RATES OF GAAS, ALGAAS, INP, AND MASKING MATERIALS IN A BORON TRICHLORIDE-CHLORINE PLASMA
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[5] COOPER CB, 1986, ELECTROCHEMICAL SOC, V862, P432
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[7] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA
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[8] MAGNETICALLY ENHANCED REACTIVE ION ETCHING OF SILICON IN BROMINE PLASMAS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 257 - 262
[9] FELDMAN LC, 1982, MATERIALS ANAL ION C
[10] CHEMICAL DRY ETCHING OF GAAS AND INP BY CL2 USING A NEW ULTRAHIGH-VACUUM DRY-ETCHING MOLECULAR-BEAM-EPITAXY SYSTEM
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[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 168 - 171

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