DIRECTIONAL REACTIVE ION ETCHING AT OBLIQUE ANGLES

[1] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[2] SURFACE RELIEF STRUCTURES WITH LINEWIDTHS BELOW 2000A [J]. APPLIED PHYSICS LETTERS, 1978, 32 (02) : 112 - 114

[3] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326

[4] PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) : 175 - 176

[5] MAYDAN D, COMMUNICATION

[6] MELLIARSMITH CM, 1976, P S ADV ION TECHNOLO, P1008

[7] SOMEKH S, 1976, P S ADV ION TECHNOLO, P1003

[1] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[2] SURFACE RELIEF STRUCTURES WITH LINEWIDTHS BELOW 2000A [J]. APPLIED PHYSICS LETTERS, 1978, 32 (02) : 112 - 114

[3] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326

[4] PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) : 175 - 176

[5] MAYDAN D, COMMUNICATION

[6] MELLIARSMITH CM, 1976, P S ADV ION TECHNOLO, P1008

[7] SOMEKH S, 1976, P S ADV ION TECHNOLO, P1003