REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION OF DYNAMIC ION-BEAM MIXING PROCESS IN TITANIUM NITRIDE CRYSTAL-GROWTH

被引：5

作者：

BEAG, YW ^{[1
]}

MIN, K ^{[1
]}

INOUE, M ^{[1
]}

KIUCHI, M ^{[1
]}

FUJII, K ^{[1
]}

SHIMIZU, R ^{[1
]}

机构：

[1] GOVT IND RES INST,IKEDA,OSAKA 563,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 10期

关键词：

DYNAMIC ION BEAM MIXING; DEPOSITION; ION BOMBARDMENT; TIN CRYSTAL GROWTH; RHEED; PREFERENTIAL ORIENTATION;

D O I：

10.1143/JJAP.32.4714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial stages of TiN crystal growth on Si substrates in the dynamic mixing method were investigated by reflection high-energy electron diffraction (RHEED) in a newly constructed ultrahigh-vacuum apparatus. The Si (001) RHEED pattern disappeared immediately after dynamic ion beam mixing started, and then was replaced by the halo pattern representing amorphous structures. The halo gradually changed to Debye-Scherrer rings representing Ti polycrystal. The results for Si (001) and (111) substrates have confirmed that the TiN crystal is controlled by the arrival ratio, Ti/N. The present RHEED pattern study has, for the first time, revealed an observable influence of the crystallography of Si substrates on TiN crystal growth.

引用

页码：4714 / 4717

页数：4

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