IMPACT IONIZATION OF SE-RELATED DX CENTERS IN ALGAAS

被引：5

作者：

IZPURA, I ^{[1
]}

MUNOZ, E ^{[1
]}

GARCIA, F ^{[1
]}

CALLEJA, E ^{[1
]}

POWELL, AL ^{[1
]}

ROCKETT, PI ^{[1
]}

BUTTON, CC ^{[1
]}

ROBERTS, JS ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECT ENGN,SERC III-V CENT FACIL,SHEFFIELD S1 SJD,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.104531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ionization processes of Se-related DX centers have been studied in AlGaAs Schottky diodes under high reverse bias conditions. A spectroscopy technique that provides directly the free-electron concentration has been used. Besides the well known thermal and optical electron emission processes, a new mechanism, attributed to an impact ionization process of DX centers, is described, and its kinetics is analyzed.

引用

页码：735 / 737

页数：3

共 12 条

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