LOW-ENERGY AR ION-BOMBARDMENT DAMAGE OF SI, GAAS, AND INP SURFACES

被引：66

作者：

WILLIAMS, RS ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 41卷 / 02期

关键词：

D O I：

10.1016/0038-1098(82)91056-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：153 / 156

页数：4

共 19 条

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J].

ANDERSEN, HH .

APPLIED PHYSICS, 1979, 18 (02) :131-140

[2]

BAUERLEIN R, 1962, RAD DAMAGE SOLIDS, P358

[3] COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J].

BAYLISS, CR ;

KIRK, DL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) :233-&

[4] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].

BEAN, JC ;

BECKER, GE ;

PETROFF, PM ;

SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913

[5]

Chu WK., 1978, BACKSCATTERING SPECT

[6] OPTICAL AND ELECTRICAL EFFECTS OF HIGH-CONCENTRATIONS OF DEFECTS IN IRRADIATED CRYSTALLINE GALLIUM-ARSENIDE [J].

COATES, R ;

MITCHELL, EWJ .

ADVANCES IN PHYSICS, 1975, 24 (05) :593-644

[7] SPUTTERING IN SURFACE ANALYSIS OF SOLIDS - DISCUSSION OF SOME PROBLEMS [J].

COBURN, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05) :1037-1044

[8] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[9]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[10] EFFECTS OF ION ETCHING ON PROPERTIES OF GAAS [J].

KAWABE, M ;

KANZAKI, N ;

MASUDA, K ;

NAMBA, S .

APPLIED OPTICS, 1978, 17 (16) :2556-2561

← 1 2 →