REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATIONS DURING GROWTH OF ZNSXSE1-X(0LESS-THAN-OR-EQUAL-TOXLESS-THAN-OR-EQUAL-TO1) BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

CORNELISSEN, HJ ^{[1
]}

CAMMACK, DA ^{[1
]}

DALBY, RJ ^{[1
]}

机构：

[1] N AMER PHILIPS CORP,PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：769 / 772

页数：4

共 18 条

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[7] ATOMIC LAYER EPITAXY
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[8] ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES
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[9] USE OF RHEED OSCILLATIONS FOR THE GROWTH OF 2D MAGNETIC SEMICONDUCTOR SUPERLATTICES (MNSE/ZNSE)
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[10] GROWTH OF ZNSXSE1-X BY MBE ON (100)GAAS SUBSTRATES - EFFECT OF LATTICE-MATCHING
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