75TH ANNIVERSARY REVIEW SERIES - EVOLUTION OF SILICON SEMICONDUCTOR TECHNOLOGY - 1952-1977

被引：17

作者：

DEAL, BE

EARLY, JM

机构：

[1] Fairchild Camera, Instrument Corporation, Research and Development Laboratory, Palo Alto

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 01期

关键词：

D O I：

10.1149/1.2128981

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：C20 / C32

页数：13

共 229 条

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[3]

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AMICK, JA ;

SCHNABLE, GL ;

VOSSEN, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1053-1063

[5]

ANDERSON AE, 1959, WESTERN ELECTR ENG, V3, P2

[6]

ANDERSON AE, 1959, WESTERN ELECTR ENG, V3, P30

[7]

ANDERSON AE, 1960, WESTERN ELECTR ENG, V4, P14

[8] TECHNIQUE FOR CONNECTING ELECTRICAL LEADS TO SEMICONDUCTORS [J].

ANDERSON, OL ;

CHRISTENSEN, H ;

ANDREATCH, P .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :923-923

[9] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J].

ANDREWS, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :972-984

[10]

[Anonymous], CHARGE TRANSFER DEVI

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