LOW-THRESHOLD AND NARROW-LINEWIDTH 1.5-MU-M COMPRESSIVE-STRAINED MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK LASERS

被引：3

作者：

ZAH, CE

BHAT, R

MENOCAL, SG

FAVIRE, F

LIN, PSD

GOZDZ, AS

ANDREADAKIS, NC

PATHAK, B

KOZA, MA

LEE, TP

机构：

[1] Bellcore, Red Bank, NJ 07701

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 18期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.5-mu-m compressive-strained multiquantum-well distributed-feedback lasers have been fabricated and characterised. 5.5 mA threshold current, 1 MHz mW linewidth-power product, and 600 kHz minimum linewidth were measured on 500-mu-m long devices. Measured threshold current as low as 2.2 mA was also obtained on 150-mu-m long devices. Both low threshold and narrow linewidth are attributed to the reduced transparency current and linewidth enhancement factor due to the effect of strain.

引用

页码：1628 / 1630

页数：3

共 16 条

[11] INGAAS INP QUANTUM-WELL LASERS WITH SUB-MA THRESHOLD CURRENT [J].

TEMKIN, H ;

DUTTA, NK ;

TANBUNEK, T ;

LOGAN, RA ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1990, 57 (16) :1610-1612

[12]

VODHANEL RS, 1980, APPL PHYS LETT, V48, P966

[13]

YABLONOVITCH E, 1988, J LIGHTWAVE TECHNOL, V6, P1292

[14] PERFORMANCE OF 1.5-MU-M LAMBDA-4-SHIFTED DFB-SIPBH LASER-DIODES WITH ELECTRON-BEAM DEFINED AND REACTIVE ION-ETCHED GRATINGS [J].

ZAH, CE ;

CANEAU, C ;

MENOCAL, SG ;

GOZDZ, AS ;

LIN, PSD ;

FAVIRE, F ;

YIYAN, A ;

LEE, TP ;

DENTAI, AG ;

JOYNER, CH .

ELECTRONICS LETTERS, 1989, 25 (10) :650-652

[15] SUBMILLIAMPERE-THRESHOLD 1.5-MU-M STRAINED-LAYER MULTIPLE QUANTUM-WELL LASERS [J].

ZAH, CE ;

FAVIRE, FJ ;

BHAT, R ;

MENOCAL, SG ;

ANDREADAKIS, NC ;

HWANG, DM ;

KOZA, M ;

LEE, TP .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (12) :852-853

[16]

ZAH CE, 1991, IEEE J QUANTUM ELECT, V27

← 1 2 →