SEMICONDUCTOR SURFACE PROPERTIES DEDUCED FROM FREE CARRIER ABSORPTION AND REFLECTION OF INFRARED RADIATION

被引：25

作者：

HARRICK, NJ

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1960年 / 14卷

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D O I：

10.1016/0022-3697(60)90208-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

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页码：60 / 71

页数：12

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共 28 条

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[8] LIFETIME MEASUREMENTS OF EXCESS CARRIERS IN SEMICONDUCTORS
HARRICK, NJ
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[9] CHARACTERISTICS OF JUNCTIONS IN GERMANIUM
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[10] REFLECTION OF INFRARED RADIATION FROM A GERMANIUM-MERCURY INTERFACE
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