ANNEALING RESULTS ON LOW-ENERGY PROTON-IRRADIATED GAAS SOLAR-CELLS

被引：3

作者：

KACHARE, R

ANSPAUGH, BE

OMEARA, L

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4720 / 4725

页数：6

共 19 条

[1]

Anspaugh B. E., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P499

[2]

JANNI JF, 1982, ATOM DATA NUCL DATA, V27, P268

[3] SPATIAL-RESOLUTION AND NATURE OF DEFECTS PRODUCED BY LOW-ENERGY PROTON IRRADIATION OF GAAS SOLAR-CELLS [J].

KACHARE, R ;

ANSPAUGH, BE .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1459-1461

[4] DISLOCATION-MOTION IN GAAS/ALXGA1-XAS STRUCTURES [J].

KUESTERS, KH ;

DECOOMAN, BC ;

CARTER, CB .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4065-4073

[5] RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS [J].

LANG, DV ;

KIMERLING, LC ;

LEUNG, SY .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3587-3591

[6] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

KIMERLING, LC .

PHYSICAL REVIEW B, 1977, 15 (10) :4874-4882

[7]

Li S. S., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P27

[8] EFFECTS OF LOW-TEMPERATURE PERIODIC ANNEALING ON THE DEEP-LEVEL DEFECTS IN 200 KEV PROTON IRRADIATED ALGAAS-GAAS SOLAR-CELLS [J].

LI, SS ;

CHIU, TT ;

LOO, RY .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4113-4118

[9] DEEP-LEVEL DEFECTS, RECOMBINATION MECHANISMS, AND THEIR CORRELATION TO THE PERFORMANCE OF LOW-ENERGY PROTON-IRRADIATED ALGAAS-GAAS SOLAR-CELLS [J].

LI, SS ;

WANG, WL ;

LAI, PW ;

LOO, RY ;

KAMATH, GS ;

KNECHTLI, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :857-864

[10]

Loo R., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1090

← 1 2 →