EFFECT OF EDGES ON RELIABILITY OF GAAS AND (ALGA)AS HETEROJUNCTION LEDS

被引：12

作者：

KRESSEL, H ^{[1
]}

ETTENBERG, M ^{[1
]}

LOCKWOOD, HF ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 05期

关键词：

D O I：

10.1007/BF02672228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：467 / 481

页数：15

共 8 条

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KRESSEL, H ;

LOCKWOOD, HF .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :82-85

[2] PERMANENT DEGRADATION OF GAAS TUNNEL DIODES [J].

GOLD, RD ;

WEISBERG, LR .

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[3] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J].

HARTMAN, RL ;

HARTMAN, AR .

APPLIED PHYSICS LETTERS, 1973, 23 (03) :147-149

[4] INFLUENCE OF DEVICE FABRICATION PARAMETERS ON GRADUAL DEGRADATION OF (AIGA)AS CW LASER-DIODES [J].

LADANY, I ;

KRESSEL, H .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :708-710

[5]

LADANY I, 1974, 1974 C GALL ARS REL, P192

[6] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

LANG, DV ;

KIMERLING, LC .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :489-492

[7] EXPERIMENTAL TESTS OF PROPOSED MECHANISMS FOR GRADUAL DEGRADATION OFF GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

NEWMAN, DH ;

OHARA, S ;

RITCHIE, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (03) :379-&

[8] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471

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