EXPERIMENTAL TESTS OF PROPOSED MECHANISMS FOR GRADUAL DEGRADATION OFF GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS

被引：11

作者：

NEWMAN, DH

OHARA, S

RITCHIE, S

机构：

来源：

关键词：

D O I：

10.1109/JQE.1972.1076960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：379 / &

共 10 条

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[2] BIARD JR, 1964, T METALL SOC AIME, V230, P286
[3] BYER NE, 1969, IEEE J QUANTUM ELECT, VQE 5, P242
[4] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
HAYASHI, I
PANISH, MB
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
[5] JONSCHER AK, 1967, 1966 P INT S GAAS, P78
[6] EVIDENCE FOR ROLE OF CERTAIN METALLURGICAL FLAWS IN ACCELERATING ELECTROLUMINESCENT DIODE DEGRADATION
KRESSEL, H
BYER, NE
LOCKWOOD, H
HAWRYLO, FZ
NELSON, H
ABRAHAMS, MS
MCFARLAN.SH
[J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 635 - &
[7] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS
KRESSEL, H
BYER, NE
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (01) : 25 - &
[8] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS
LASHER, G
STERN, F
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &
[9] DEGRADATION OF GAAS INJECTION DEVICES
STEINER, SA
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 65 - +
[10] WEISBERG LR, 1971, GALLIUM ARSENIDE REL, P233