THRESHOLD VOLTAGE INSTABILITY OF A-SI-H TFTS IN LIQUID-CRYSTAL DISPLAYS

[1] METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2215 - 2218

[2] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562

[3] KANEKO Y, 1986, 18TH INT C SOL STAT, P699

[4] CHARGE TRAPPING INSTABILITIES IN AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 597 - 599

[5] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 601 - 608

[6] YANAGISAWA T, 1986, 6TH P INT DISPL RES, P192

[1] METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2215 - 2218

[2] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562

[3] KANEKO Y, 1986, 18TH INT C SOL STAT, P699

[4] CHARGE TRAPPING INSTABILITIES IN AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 597 - 599

[5] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 601 - 608

[6] YANAGISAWA T, 1986, 6TH P INT DISPL RES, P192