PLASMA-ASSISTED LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAN ON GAAS SUBSTRATES

被引：43

作者：

SATO, M

机构：

[1] NTT Basic Research Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 03期

关键词：

D O I：

10.1063/1.360193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cubic and hexagonal GaN films were grown on (001) GaAs substrates by plasma-assisted low-pressure metalorganic chemical vapor deposition using triethylgallium and nitrogen radicals. The GaN growth rate was lower than that of GaAs and it was enhanced by simultaneous supply of hydrogen radicals to the growing surface. Cubic GaN was grown epitaxially under Ga-rich conditions, and c-axis oriented hexagonal GaN was grown under N-rich conditions. (C) 1995 American Institute of Physics.

引用

页码：2123 / 2125

页数：3

共 14 条

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