STUDY OF ELECTROMIGRATION-INDUCED RESISTANCE AND RESISTANCE DECAY IN AL THIN-FILM CONDUCTORS

被引：27

作者：

LLOYD, JR ^{[1
]}

KOCH, RH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.99517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：194 / 196

页数：3

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